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Emerging and advanced techologies in Electronics - Part 2

22 SEPTEMBERclessidra che gira16:00 - 17:30

 FRESCOES ROOM
MICRO-NANO ELECTRONICS
MICRO-NANO ELECTRONICS
TT.VIII Technical Multi-Track with Parallel SYMPOSIA
Emerging and advanced techologies in Electronics - Part 2
Co-organized with Sapienza University of Rome
Chair: Vittorio MORANDI, CNR-IMM

There is a constant demand for faster, higher density and lower power forms of data/information handling and processing. This inevitably leads to the need to make individual electronic devices such as transistors, memory nodes and other components smaller/faster and smaller/faster The continued march of miniaturization in electronics provides a constant challenge for designing future technologies to stay at the forefront of semiconductor technology. Nanospintronics, quantum information processing, single-electron devices, nanoelectronics and organic nanoelectronics are possible concrete approach to develop new technologies with related advanced devices, including memories, for which there is a continuously increasing demand of faster and low power-consuming performances. In such a context, material innovation is of central importance. The session(s) will focus the attention on some recent advances regarding electronic devices both in terms of technology and materials.

 The symposium is part of the Special Event SE.II 
TT.VIII.G.1
SE.II.4.1

Roberto MANTOVAN - CVCNR-IMM
Development of large-area topological insulators on Silicon for spintronics

MANTOVAN Roberto PPT col
TT.VIII.G.2
SE.II.4.2
Andrzej SIKORA
Wrocław University of Science and Technology, Poland
Diagnostics of microelectronic devices with scanning probe microscopy methods: problems and solutions
!UOMO PPT eceded
TT.VIII.G.3
SE.II.4.3
Vincenzo VINCIGUERRA
STMicroelectronics
Modelling the Elastic Energy of a Bifurcated Wafer: A Benchmark of the Analytical Solution vs. the ANSYS Finite Element Analysis
!UOMO PPT eceded
TT.VIII.G.4
SE.II.4.4
Alessio URBANI
Micron
3D-NAND cell challenges to enable high density and high-performance devices
!UOMO PPT eceded
TT.VIII.G.5
SE.II.4.5
Raffaella CALARCO
CNR-IMM
Boosting automotive applications with phase change alloys and heterostructures
!DONNA PPT eceded
TT.VIII.G.6
SE.II.4.6
Ivana ZRINKSI
Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University, Austria
Resistive switching in tantalum and hafnium nanoscale anodic oxide devices
!DONNA PPT eceded
 

 
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