Emerging and advanced techologies in Electronics - Part 2
22 SEPTEMBER16:00 - 17:30
FRESCOES ROOM | |||
MICRO-NANO ELECTRONICS |
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MICRO-NANO ELECTRONICS | |||
TT.VIII - Technical Multi-Track with Parallel SYMPOSIA | |||
Emerging and advanced techologies in Electronics - Part 2 | |||
Co-organized with Sapienza University of Rome Chair: Vittorio MORANDI, CNR-IMM |
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There is a constant demand for faster, higher density and lower power forms of data/information handling and processing. This inevitably leads to the need to make individual electronic devices such as transistors, memory nodes and other components smaller/faster and smaller/faster The continued march of miniaturization in electronics provides a constant challenge for designing future technologies to stay at the forefront of semiconductor technology. Nanospintronics, quantum information processing, single-electron devices, nanoelectronics and organic nanoelectronics are possible concrete approach to develop new technologies with related advanced devices, including memories, for which there is a continuously increasing demand of faster and low power-consuming performances. In such a context, material innovation is of central importance. The session(s) will focus the attention on some recent advances regarding electronic devices both in terms of technology and materials. |
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The symposium is part of the Special Event SE.II | |||
TT.VIII.G.1 SE.II.4.1 |
Roberto MANTOVAN - CV, CNR-IMM |
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TT.VIII.G.2 SE.II.4.2 |
Andrzej SIKORA Wrocław University of Science and Technology, Poland Diagnostics of microelectronic devices with scanning probe microscopy methods: problems and solutions |
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TT.VIII.G.3 SE.II.4.3 |
Vincenzo VINCIGUERRA STMicroelectronics Modelling the Elastic Energy of a Bifurcated Wafer: A Benchmark of the Analytical Solution vs. the ANSYS Finite Element Analysis |
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TT.VIII.G.4 SE.II.4.4 |
Alessio URBANI Micron 3D-NAND cell challenges to enable high density and high-performance devices |
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TT.VIII.G.5 SE.II.4.5 |
Raffaella CALARCO CNR-IMM Boosting automotive applications with phase change alloys and heterostructures |
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TT.VIII.G.6 SE.II.4.6 |
Ivana ZRINKSI Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University, Austria Resistive switching in tantalum and hafnium nanoscale anodic oxide devices |
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